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Other articles related with "SiGe HBT"：
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16104 |
Ya-Hui Feng(冯亚辉), Hong-Xia Guo(郭红霞), Yi-Wei Liu(刘益维), Xiao-Ping Ouyang(欧阳晓平), Jin-Xin Zhang(张晋新), Wu-Ying Ma(马武英), Feng-Qi Zhang(张凤祁), Ru-Xue Bai(白如雪), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃) |
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Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect |
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Chin. Phys. B
2024 Vol.33 (1): 16104-16104
[Abstract]
(73)
[HTML 0 KB]
[PDF 2002 KB]
(12)
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76106 |
Jia-Nan Wei(魏佳男), Chao-Hui He(贺朝会), Pei Li(李培), Yong-Hong Li(李永宏), Hong-Xia Guo(郭红霞) |
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Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor |
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Chin. Phys. B
2019 Vol.28 (7): 76106-076106
[Abstract]
(593)
[HTML 1 KB]
[PDF 1215 KB]
(195)
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108501 |
Jin-Xin Zhang(张晋新), Hong-Xia Guo(郭红霞), Xiao-Yu Pan(潘霄宇), Qi Guo(郭旗), Feng-Qi Zhang(张凤祁), Juan Feng(冯娟), Xin Wang(王信), Yin Wei(魏莹), Xian-Xiang Wu(吴宪祥) |
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Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor |
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Chin. Phys. B
2018 Vol.27 (10): 108501-108501
[Abstract]
(578)
[HTML 1 KB]
[PDF 1529 KB]
(180)
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88502 |
Jin-Xin Zhang(张晋新), Chao-Hui He(贺朝会), Hong-Xia Guo(郭红霞), Pei Li(李培), Bao-Long Guo(郭宝龙), Xian-Xiang Wu(吴宪祥) |
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Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor |
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Chin. Phys. B
2017 Vol.26 (8): 88502-088502
[Abstract]
(647)
[HTML 1 KB]
[PDF 714 KB]
(208)
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124401 |
Qiang Fu(付强), Wan-Rong Zhang(张万荣), Dong-Yue Jin(金冬月), Yan-Xiao Zhao(赵彦晓), Xiao Wang(王肖) |
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A technique for simultaneously improving the product of cutoff frequency-breakdown voltage and thermal stability of SOI SiGe HBT |
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Chin. Phys. B
2016 Vol.25 (12): 124401-124401
[Abstract]
(510)
[HTML 1 KB]
[PDF 1748 KB]
(265)
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48501 |
Ya-Bin Sun(孙亚宾), Jun Fu(付军), Yu-Dong Wang(王玉东), Wei Zhou(周卫), Wei Zhang(张伟), and Zhi-Hong Liu(刘志弘) |
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Extraction of temperature dependences of small-signal model parameters in SiGe HBT HICUM model |
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Chin. Phys. B
2016 Vol.25 (4): 48501-048501
[Abstract]
(599)
[HTML 1 KB]
[PDF 319 KB]
(434)
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38501 |
Yan-Xiao Zhao(赵彦晓), Wan-Rong Zhang(张万荣), Xin Huang(黄鑫), Hong-Yun Xie(谢红云), Dong-Yue Jin(金冬月), Qiang Fu(付强) |
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Effect of lateral structure parameters of SiGe HBTs on synthesized active inductors |
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Chin. Phys. B
2016 Vol.25 (3): 38501-038501
[Abstract]
(610)
[HTML 0 KB]
[PDF 347 KB]
(317)
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1439 |
Hu Hui-Yong (胡辉勇), Zhang He-Ming (张鹤鸣), Dai Xian-Ying (戴显英), Jia Xin-Zhang (贾新章), Cui Xiao-Ying (崔晓英), Wang Wei (王伟), Ou Jian-Feng (区健锋), Wang Xi-Yuan (王喜媛) |
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Model of transit time for SiGe HBT collector junction depletion-layer |
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Chin. Phys. B
2005 Vol.14 (7): 1439-1443
[Abstract]
(1213)
[HTML 0 KB]
[PDF 251 KB]
(707)
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